新时代赌城网址

Zhejiang University Chinese

ACADEMICS

Khurram Shehzad-Syllabus and Introduction

Editor: Date:2019-11-14 Hits:50

Contents and Syllabus of the course 

First quarter cover p-n junctions, heterojunctions, HBTs, FETs and MOSFETs operating under DC conditions. Here drift diffusion analysis and thermionic emission will be employed to describe current flow. In the next quarter, it is suggested that the Boltzmann transport analysis contained in the Appendix be covered and the basis for the drift-diffusion formalism explained. Next the methodology for deriving the high frequency properties of devices such as HBTs and FETs along with their equivalent circuits is covered. Lastly, High Electron Mobility Transistors and Gallium Nitride based devices may be covered

 

Part 1

 

Lecture 1: Shockley-Read-Hall analysis of lifetime (this introduces the concept of lifetime essentialfor p-n junction analysis)

 

Lecture 2: p-n junction electrostatics, p-n junction transport (Forward)

 

Lecture 3: p-n junction transport (Reverse) and Applications

 

Lecture 4: Schottky barrier electrostatics and current transport

 

Lecture 5: Graded materials, Quasi-fields and heterojuncions

 

Lecture 6: HBTs, Generalized Moll-Ross relationship Early effect, Kirk effect(quick description)

 

Lecture 7: FETs and gradual channel analysis

 

Lecture 8: High Aspect Ratio design analysis

 

Lecture 9: MOS Capacitor and MOSFETs

 

Lecture 10: Non-ideal effects

 

Part 2

 

Lecture 1 and 2: Boltzmann Transport Equation and consequences (Drift Diffusion Equation

 

derivation, relaxation times)

 

Lecutre 3: Charge Control Model (Description and application to HBTs)

 

Lecutre 4: Ramo-Shockley Theorem and the Kirk effect

 

Lecutre 5: High Frequency properties of HBTs

 

Lecutre 6: Equivalenbt Circuit derivation of HBTs; Figures of Merit

 

Lecutre 7: HEMTs; Electrostatics

 

Lecutre 8: Gallium Nitride; Polarization and device design

 

Lecutre 9: HEMTs; I-V characteristics, Design Issues

 

Lecutre 10: HEMTs and FETs; High Frequency Performance

 

Reference:

Vost, Clifton,microelectronic devices and circuits2006 Edition

Howe, Roger, Charlesmicroelectronics1996 edition

Robert F. PierretSemiconductor Device Fundamentals2008 edition


Introduction

Dr. Khurram Shehzad obtained his Ph.D. in Materials Science and Engineering (with focus on electronic materials) from Beijing University of Chemical Technology, Beijing, China. From 2011-2013, he was a Postdoctoral Research Fellow at the Center for Nano and Micro Mechanics, Tsinghua University, Beijing, China. He was a Postdoctoral Fellow at the College of Information Science and Electronics, Zhejiang University, China, from 2014-2017. Currently, he is a faculty member at College of Information Science and Electronics, Zhejiang University, China.  Dr. Khurram has a strong background of Chemistry, Physics, and Materials Science/Engineering which makes him a perfect choice for advanced multidisciplinary teaching/research. He has taught course on Microelectroncis Device Physics at both grad and undergrad level. He is the recipient of several awards including International Young Scientist Fellowship from NSF China, Nanchang University Fellowship, CAS President Fellowship, and the Cultural Exchange Fellowship. His current research interests include hetero-structures and the macro-assemblies of two-dimensional materials for their applications in energy, healthcare, and electronics. 


Contact Us

新时代赌城网址-亚洲中国新时代最佳赌城