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Silicon Based InAs QD Comb Lasers: Enabling the Next-Generation High-Speed Optical Interconnect

Date:2020-12-19

Date: 2020-12-21

Time: 10:00-11:15

Venue: 215 Room, ISEE Biulding

Speaker: Zihao WANG

Category: Talk & Lecture


Description:

Silicon based InAs quantum dot comb lasers, also called mode locked lasers (QD-MLLs), are ideal compact solutions to generate high speed optical pulses for applications in optical time division multiplexing (OTDM), wavelength division multiplexing (WDM), and high-speed electro-optic sampling systems. QD-MLL can provide high-frequency optical pulses with low power consumption and low-cost production possibilities. Here, we demonstrated a single section MLL  monolithically grown on Si (001) substrate with a repetition rate of 23.5 GHz. The 3-dB Radio Frequency (RF) linewidth of the QD-MLL was stabilized at optimized injection current under free running mode. By introducing self-injection feedback locking at a feedback strength of -24dB, the RF linewidth of MLL was significantly narrowed by two orders of magnitude from 900kHz to 8kHz. The realization of self-injection locking by using Si-based single-section InAs QD-MLL is a promising solution to integrate a low timing jitter, low phase noise and high frequency mode-locked optical sources for next-generation high-speed optical interconnect.



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